FREMONT, Calif.--(BUSINESS WIRE)-- MicroWave Technology Inc. (MwT), the RF division of IXYS Corporation (NAS: IXYS) , announced that it offers an advanced AlGaAs/InGaAs pHEMT-based MMIC ...

Chelmsford, MA — Hittite Microwave Corporation has introduced three new SMT packaged GaAs pHEMT MMIC low noise amplifiers (LNAs) which are ideal for automotive, broadband, cellular/3G, WiMAX/4G and ...

BIEL, Switzerland & FREMONT, Calif.--(BUSINESS WIRE)-- MwT, a division of IXYS Corporation (NAS: IXYS) , introduces two high performance and high efficiency GaAs/AlGaAs pHEMT-based Monolithic ...

MicroWave Technology Inc., the RF division of IXYS Corporation, announced that it offers an advanced AlGaAs/InGaAs pHEMT-based MMIC ultra-broadband driver amplifier product up to 50 GHz. The product ...

FREMONT, Calif., June 15, 2017 (GLOBE NEWSWIRE) -- MicroWave Technology, Inc. (MwT), a division of IXYS Corporation (NASDAQ: IXYS), announced the release of its advanced GaAs/AlGaAs pHEMT-based ...

Hittite Microwave has added two medium power amplifiers to its product line. These GaAs PHEMT MMIC amplifiers provide frequency coverage in the 5 to 18GHz and 34 to 42GHz bands, and are aimed at ...

Hittite Microwave’s two SMT packaged GaAs pHEMT MMIC low noise amplifiers feature a failsafe bypass mode. They are ideal for automotive, cellular/3G, WiMAX/4G and test equipment applications from 700 ...

In this white paper, a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) power amplifier (PA) design approach is examined from a systems perspective. It highlights the ...

MicroWave Technology Announces Advanced GaAs pHEMT-Based Ultra-Broadband Driver MMIC Amplifier Up to 50 GHz The Latest in a Series of MMIC Products from MwT Designed For Broadband Driver Applications ...