Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...

To meet the increasing demands of AI workloads, memory solutions must deliver ever-increasing performance in bandwidth, capacity, and efficiency. From the training of massive large language models ...

We may receive a commission on purchases made from links. A general trend in the advancement of technology is the slimming down of devices. Phones have become pocketable, computers now actually fit on ...