Irvine, Calif.—Microsemi Corp. recently developed a high speed IGBT transistor line for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...

Add Yahoo as a preferred source to see more of our stories on Google. MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...