TV Technology

Richardson RFPD announces LDMOS RF power transistors for UHF broadcast

Richardson RFPD has announced the availability of two 50V LDMOS RF power transistors, setting a new standard for ruggedness in the UHF broadcast industry. The MRFE6VP8600H and MRFE6VP8600HS are ...
EDN

LDMOS RF Power Transistors

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...
EDN

Freescale : RF power transistor targets UHF broadcast applications

Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Electronic Design

Cool RF Transistors Pack A Mean Punch

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
Business Wire

Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic Packages

PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor [NYSE: FSL], the global leader in radio frequency (RF) power transistors, today introduced two ultra-wideband RF power gallium nitride (GaN) ...
Business Wire

Wolfspeed GaN RF Devices Demonstrate Reliability to Perform in Harsh Space Environments

DURHAM, N.C.-- (BUSINESS WIRE)-- Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for ...