TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
A conceptual diagram of diluted hydrogen annealing of SiO 2 /SiC structure. The background scenery is inside the Class 1 cleanroom located in Graduate School of Engineering, The University of Osaka.
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