Freescale Semiconductor, supplier of high-power radio-frequency (RF) power transistors for 2.5G and 3G wireless base-station amplifiers, has shipped more than 10 million high-power, high-frequency RF ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...
Sunnyvale, Calif. – The Electronic Device Group of Mitsubishi Electric & Electronics USA Inc. has introduced MOSFET-based RF transmitters for VHF, UHF and 800-MHz applications. The eight modules and ...
LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...
Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile base stations to build smaller, more powerful and more ...
CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...
Anton is the former Editor-in-Chief of Pocketnow.com. As publication leader, he brought Pocketnow as close as possible to the audience throughout the years, while leading a team of enthusiastic ...
Gallium nitride (GaN) is quickly becoming the semiconductor material of choice for both RF/microwave and higher-wavelength devices. It has long been a semiconductor foundation for light-emitting ...
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