It has been long known that complementary metal-oxide semiconductor (CMOS) transistors suffer from a scaling issue. As CMOS field-effect transistors (FETs) get smaller, they become less power ...

A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...

(Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power efficient and scaleable semiconductor devices — components that use minimal ...

Australian researchers have discovered that negative capacitance could lower the energy used in electronics and computing, which represents 8% of global electricity demand. The researchers at four ...

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...