Spin-Orbit Torque magnetic memory (SOT-MRAM) is the only non-volatile memory technology fast enough to be used closest to the ...

Memory technology has evolved quickly in recent years, driven by the need to improve on traditional systems. One promising candidate, Magnetoresistive Random Access Memory (MRAM), is gaining attention ...

Japan’s TDK is showing for the first time its prototype of a new memory chip technology that is seen as a promising replacement for today’s ubiquitous flash memory. Spin-transfer torque MRAM has the ...

Numerous memory types for computing devices have emerged in recent years, aiming to overcome the limitations imposed by traditional random access memory (RAM). Magnetoresistive RAM (MRAM) is one such ...

Infineon Technologies AG and IBM Corp. have demonstrated a prototype 16Mb MRAM (magnetic RAM) chip, bringing the power-saving technology one step closer to commercial availability, the companies said ...

From smartphones to supercomputers, almost all our daily electronics run on the flow of "electron charge." But did you know?

Researchers at ETH have measured the timing of single writing events in a novel magnetic memory device with a resolution of less than 100 picoseconds. Their results are relevant for the next ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...

A research team has discovered a new way to control tiny magnetic properties inside materials using electric current, which ...

IBM and Infineon Technologies will outline their advances in developing MRAM (magnetoresistive RAM) technology in a paper presented Tuesday at the VLSI Symposia in Kyoto, Japan. MRAM is a nonvolatile ...

Concept of the helimagnet-based memory devices. The directions of the atomic magnetic moments, depicted by the colored allows, are arranged into a spiral. Chirality, the right- and left-handed ...