GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced ...

Researchers at the Indian Institute of Science (IISc) have uncovered fundamental insights into designing gallium nitride (GaN ...

Efficient Power Conversion (EPC), the world leader in enhancement-mode gallium nitride (eGaN®) power devices, today announced a comprehensive licensing agreement with Renesas Electronics Corporation, ...

An advanced gate design could reshape EV and data center power systems.

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.

GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (OTCQB: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—today released ...

Wolfspeed, A Cree Company, announced that its GaN-on-SiC RF power transistors have completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems.

Gallium nitride (GaN) transistors have certainly increased power system performance and lowered the relative cost of components. But when it comes to quality and reliability, how does GaN stack up ...

HILLSBORO, Ore. & RICHARDSON, Texas--(BUSINESS WIRE)-- TriQuint Semiconductor, Inc. (NAS: TQNT) , a leading RF products manufacturer and foundry services provider, has achieved record-setting gallium ...

Transphorm, Inc. (OTCQB: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—today released updated information regarding its ...